DocumentCode
762879
Title
Correction to “Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells”
Author
Kim, Bomsoo ; Kwon, Wook-Hyun ; Baek, Chang-Ki ; Son, Younghwan ; Park, Chan-Kwang ; Kim, Kinam ; Kim, Dae M.
Author_Institution
Sch. of Comput. Sci., Korea Inst. for Adv. Study, Seoul
Volume
54
Issue
4
fYear
2007
fDate
4/1/2007 12:00:00 AM
Firstpage
893
Lastpage
893
Abstract
In the original article by B. Kim (see ibid., vol. 53, no. 12, p. 3012-3019, Dec. 2006) the biography for Dr. Kinam Kim was out of date. A more current one is given.
Keywords
flash memories; edge profile effect; erase threshold voltage distributions; flash memory cells; tunnel oxide;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.890466
Filename
4142885
Link To Document