DocumentCode :
762934
Title :
An ECL gate with improved speed and low power in a BiCMOS process
Author :
Oklobdzija, Vojin G.
Author_Institution :
Integration, Berkeley, CA, USA
Volume :
31
Issue :
1
fYear :
1996
fDate :
1/1/1996 12:00:00 AM
Firstpage :
77
Lastpage :
83
Abstract :
An emitter-coupled logic (ECL) gate exhibiting an improved speed-power product over the circuits presented in the past is described. The improvement is due to a combination of a push-pull output stage driven by a controlled current source, thus reducing the static and increasing the dynamic current. This circuit has better driving capabilities and improved speed, yet it uses an order of magnitude less power than a regular ECL gate. Due to its reduced power consumption, this gate allows for a higher level of integration of ECL logic. The realization of this circuit using a regular bipolar process is also possible
Keywords :
BiCMOS logic circuits; emitter-coupled logic; logic gates; BiCMOS process; ECL gate; controlled current source; dynamic current; emitter-coupled logic; low power circuit; push-pull output stage; speed-power product; static current; BiCMOS integrated circuits; CMOS technology; Clocks; Coupling circuits; Energy consumption; Frequency; Integrated circuit interconnections; Logic circuits; Logic gates; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.485868
Filename :
485868
Link To Document :
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