DocumentCode
762987
Title
Advanced modeling of distortion effects in bipolar transistors using the Mextram model
Author
De Vreede, Leo C N ; De Graaff, Henk C. ; Mouthaan, Koen ; De Kok, Marinus ; Tauritz, Joseph L. ; Baets, Roel G F
Author_Institution
Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
Volume
31
Issue
1
fYear
1996
fDate
1/1/1996 12:00:00 AM
Firstpage
114
Lastpage
121
Abstract
The modeling of distortion effects in bipolar transistors due to the onset of quasi-saturation is considered. Computational results obtained using the Mextram and Gummel-Poon models as implemented in a harmonic balance simulator are compared with measured results
Keywords
bipolar transistors; electric distortion; semiconductor device models; Gummel-Poon model; Mextram model; bipolar transistors; distortion; harmonic balance simulator; quasi-saturation; Bipolar transistors; Computational modeling; Distortion measurement; Energy consumption; Equations; Hot carriers; Space charge; Telecommunication computing; Transmitters; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.485873
Filename
485873
Link To Document