Comparison of the Work Function of Pt–Ru Binary Metal Alloys Extracted From MOS Capacitor and Schottky-Barrier-Diode Measurements

Author

Todi, R.M. ; Erickson, M.S. ; Sundaram, K.B. ; Barmak, K. ; Coffey, K.R.

Author_Institution

Central Florida Univ., Orlando , FL

Volume

54

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

807

Lastpage

813

Abstract

This paper describes a systematic comparison of work function for the Pt-Ru binary-alloy metals, extracted from capacitance-voltage (C-V) characteristics of MOS capacitors and the current-voltage (I-V) and C-V characteristics of Schottky-barrier diodes. Our results indicate that the work function of the Pt-Ru binary-alloy system can be tuned over the wide range of 4.8-5.2 eV. Furthermore, the results indicate that the change of film properties, i.e., resistivity, work function, and crystal structure, with composition is consistent with the equilibrium-phase diagram and that the work function in the face-centered cubic and the hexagonal-close-pack single-phase regions is only weakly dependent on composition while a strong dependence is observed in the intermediate compositional range. It is also observed that work-function values obtained from the Schottky I-V analysis are significantly lower than those extracted from the MOS C-V data

Keywords

MOS capacitors; Schottky barriers; Schottky diodes; platinum alloys; ruthenium alloys; semiconductor device testing; work function; 4.8 to 5.2 eV; MOS capacitor measurements; Pt-Ru; Schottky I-V analysis; binary metal alloys; capacitance-voltage characteristics; current-voltage characteristics; equilibrium-phase diagram; gate electrode; schottky-barrier-diode measurements; work function comparison; Gate electrode; Pt–Ru; S chottky; metal alloy; work function;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.892352

Filename

4142907