• DocumentCode
    763416
  • Title

    Novel densely packed laser diode array

  • Author

    Harding, C.M. ; Waters, R.G.

  • Author_Institution
    McDonnell Douglas Electron. Syst. Co., Opto-Electron. Centre, Elmsford, NY, USA
  • Volume
    27
  • Issue
    24
  • fYear
    1991
  • Firstpage
    2233
  • Lastpage
    2234
  • Abstract
    A new GaAs/AlGaAs linear diode laser array with a packing density approaching 90% has been fabricated using chemically assisted ion beam etching. Results are presented for arrays which exhibit single-ended optically coated external quantum efficiencies of 71% and a maximum output power of 23 W (quasi-CW) from a 1 mm aperture.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor laser arrays; sputter etching; 1 mm; 23 W; 71 percent; CAIBE; GaAs-AlGaAs; chemically assisted ion beam etching; densely packed laser diode array; external quantum efficiencies; fabrication; high power laser arrays; linear diode laser array; maximum output power; packing density; semiconductors; single-ended optically coated;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911381
  • Filename
    109505
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=763416