DocumentCode :
76342
Title :
Room Temperature Electrostatic Across the Interface in Nanostructured ZnO/La _{0.7} Sr _{0.3} MnO
Author :
Khachar, Uma ; Solanki, P.S. ; Kansara, Sanjay B. ; Choudhary, R.J. ; Phase, D.M. ; Kuberkar, D.G. ; Shah, N.A.
Author_Institution :
Dept. of Phys., Saurashtra Univ., Rajkot, India
Volume :
12
Issue :
6
fYear :
2013
fDate :
Nov. 2013
Firstpage :
915
Lastpage :
918
Abstract :
PLD grown ZnO/La0.7Sr0.3MnO3/SrTi0.998Nb0.002O3 nanostructured heterostructure has been studied for its nanoelectronic properties at room temperature under zero applied field. XRD φ-scan reveals the epitaxial growth of La0.7Sr0.3MnO3 (LSMO) film, while the transport of 10-nm LSMO manganite layer can be tuned with applied electric field using various field effect configurations. 10-nm LSMO layer shows a large change in resistance with the application of voltage, i.e., exhibiting colossal electroresistance (CER) ~100% (negative) and large positive electroresistance (ER) ~2683% under 4.5 V at room temperature. The variation scenario in 10-nm LSMO transport has been discussed on the basis of electric-field-induced modifications in the charge carrier density and electronic states.
Keywords :
II-VI semiconductors; X-ray diffraction; carrier density; lanthanum compounds; nanofabrication; nanostructured materials; pulsed laser deposition; semiconductor heterojunctions; strontium compounds; wide band gap semiconductors; zinc compounds; PLD grown nanostructured heterostructure; XRD φ-scan; ZnO-La0.7Sr0.3MnO3-SrTi0.998Nb0.002O3; applied electric field; charge carrier density; colossal electroresistance; electric-field-induced modifications; electronic states; electrostatic; field effect configurations; film epitaxial growth; manganite layer transport; nanoelectronic properties; positive electroresistance; size 10 nm; temperature 293 K to 298 K; voltage 4.5 V; voltage application; Educational institutions; Electric fields; Erbium; Field effect transistors; Physics; Resistance; Zinc oxide; Heterojunctions; nanoscale devices; semicon-ductor–metal interfaces;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2277548
Filename :
6576250
Link To Document :
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