DocumentCode :
763903
Title :
Effect of Deposition Pressure on Switching Field Distribution of CoPtCr–SiO 
Perpendicular Magnetic Recording Thin Film Media
Perpendicular Magnetic Recording Thin Film MediaAuthor :
Vokoun, David ; Lai, Chih-Huang ; Lin, Meng-Shian ; Jiang, Ruo-Fan
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
Volume :
42
Issue :
10
fYear :
2006
Firstpage :
2396
Lastpage :
2398
Abstract :
We studied the effects of the deposition Ar pressure on the switching field distribution (SFD) of Tb/Pt/Ru/CoPtCr-SiO2 perpendicular media. In this study, we describe a simple method for obtaining parameters of the SFD such as the standard deviation (SD) while taking the effect of demagnetizing field into account. The SFD changed its character greatly with the change of Ar pressure. The differences in the SD of the SFD of various samples may originate from the variation of intergranular exchange and the demagnetizing field due to different Ar pressure
Keywords :
argon; cobalt alloys; demagnetisation; magnetic fields; magnetic switching; magnetic thin films; perpendicular magnetic recording; platinum alloys; silicon compounds; SFD; Tb-Pt-Ru-CoPtCr-SiO2; demagnetizing field; deposition pressure effect; intergranular exchange; perpendicular magnetic recording; switching field distribution; thin film media; Argon; Demagnetization; Grain size; Magnetic fields; Magnetic films; Magnetic switching; Materials science and technology; Perpendicular magnetic recording; Saturation magnetization; Sputtering; Demagnetizing field; perpendicular recording media; switching field distribution; switching volume;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2006.878676
Filename :
1704311
Link To Document :
