• DocumentCode
    763903
  • Title

    Effect of Deposition Pressure on Switching Field Distribution of CoPtCr–SiO _2 Perpendicular Magnetic Recording Thin Film Media

  • Author

    Vokoun, David ; Lai, Chih-Huang ; Lin, Meng-Shian ; Jiang, Ruo-Fan

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
  • Volume
    42
  • Issue
    10
  • fYear
    2006
  • Firstpage
    2396
  • Lastpage
    2398
  • Abstract
    We studied the effects of the deposition Ar pressure on the switching field distribution (SFD) of Tb/Pt/Ru/CoPtCr-SiO2 perpendicular media. In this study, we describe a simple method for obtaining parameters of the SFD such as the standard deviation (SD) while taking the effect of demagnetizing field into account. The SFD changed its character greatly with the change of Ar pressure. The differences in the SD of the SFD of various samples may originate from the variation of intergranular exchange and the demagnetizing field due to different Ar pressure
  • Keywords
    argon; cobalt alloys; demagnetisation; magnetic fields; magnetic switching; magnetic thin films; perpendicular magnetic recording; platinum alloys; silicon compounds; SFD; Tb-Pt-Ru-CoPtCr-SiO2; demagnetizing field; deposition pressure effect; intergranular exchange; perpendicular magnetic recording; switching field distribution; thin film media; Argon; Demagnetization; Grain size; Magnetic fields; Magnetic films; Magnetic switching; Materials science and technology; Perpendicular magnetic recording; Saturation magnetization; Sputtering; Demagnetizing field; perpendicular recording media; switching field distribution; switching volume;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2006.878676
  • Filename
    1704311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=763903