Fully integrated 60-GHz single-ended resistive mixer in 90-nm CMOS technology

Author

Motlagh, Bahar M. ; Gunnarsson, Sten E. ; Ferndahl, Mattias ; Zirath, Herbert

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg

Volume

16

Issue

1

fYear

2006

Firstpage

25

Lastpage

27

Abstract

This letter presents the design and characterization of a fully integrated 60-GHz single-ended resistive mixer in a 90-nm CMOS technology. A conversion loss of 11.6dB, 1-dB compression point of 6dBm and IIP3 of 16.5dBm were measured with a local oscillator (LO) power of 4dBm and zero drain bias. The possibility of improvement in IIP3 with selective drain bias has been verified. A 3-dB improvement in IIP3 was obtained with 150-mV dc voltage applied at the drain. Microstrip transmission lines are used to realize matching and filtering at LO and radio frequency ports

Keywords

CMOS integrated circuits; field effect MIMIC; microstrip lines; millimetre wave mixers; 11.6 dB; 150 mV; 60 GHz; 90 nm; CMOS; V band; local oscillator power; microstrip transmission line; millimeter wave; monolithic microwave integrated circuit; radio frequency port; selective drain bias; single-ended resistive mixer; CMOS technology; Filtering; Local oscillators; Loss measurement; Matched filters; Microstrip filters; Power measurement; Power transmission lines; Transmission line measurements; Voltage; 60 GHz; 90 nm; CMOS; V band; millimeter wave; monolithic microwave integrated circuit (MMIC); resistive mixer; selective drain bias;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.861354

Filename

1561307