17-GHz 50-60 mW power amplifiers in 0.13-μm standard CMOS

Author

Vasylyev, A.V. ; Weger, P. ; Bakalski, W. ; Simbuerger, W.

Author_Institution

Chair of Circuit Design, Brandenburg Univ. of Technol., Cottbus

Volume

16

Issue

1

fYear

2006

Firstpage

37

Lastpage

39

Abstract

Two versions of power amplifiers with different output matching approaches for the 17-GHz band were realized in 0.13-mum standard digital CMOS technology with 1.5-V supply voltage. The power amplifier with an external matching network delivers 17.8-dBm saturated output power with 15.6% power added efficiency (PAE). The small-signal gain is 11.5 dB. The fully integrated power amplifier delivers 17.1-dBm saturated output power with 9.3% PAE. The small-signal gain is 14.5 dB. No external radio frequency components are required

Keywords

CMOS analogue integrated circuits; microwave integrated circuits; microwave power amplifiers; 0.13 micron; 1.5 V; 11.5 dB; 14.5 dB; 17 GHz; 50 to 60 mW; CMOS power amplifier; digital CMOS technology; external matching network; integrated power amplifier; power added efficiency; small-signal gain; CMOS technology; Capacitors; Circuit faults; Gain; Impedance matching; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Resistors; CMOS power amplifier; impedance matching; on-chip balun; on-chip transformer; wireless local area network (LAN);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.861347

Filename

1561311