Title :
Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier
Author :
Riemer, P.J. ; Buhrow, B.R. ; Hacker, J.B. ; Bergman, J. ; Brar, B. ; Gilbert, B.K. ; Daniel, E.S.
Author_Institution :
Mayo Clinic, Rochester, MN
Abstract :
We present the development of a low-power W-band low-noise amplifier (LNA) designed in a 200-nm InAs/AlSb high electron mobility transistor (HEMT) technology fabricated on a 50-mum GaAs substrate. A single-stage coplanar waveguide with ground (CPWG) LNA is described. The LNA exhibits a noise figure of 2.5 dB and an associated gain of 5.6 dB at 90 GHz while consuming 2.0 mW of total dc power. This is, to the best of our knowledge, the lowest reported noise figure for an InAs/AlSb HEMT LNA at 90 GHz. Biased for maximum gain, the single-stage amplifier presents 6.7-dB gain and an output 1-dB gain compression point (P1dB) of -6.7dBm at 90 GHz. The amplifier provides broad-band gain, greater than 5dB over the entire W-band
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; coplanar waveguide components; gallium arsenide; indium compounds; low noise amplifiers; low-power electronics; millimetre wave amplifiers; millimetre wave integrated circuits; 1 dB; 2.0 mW; 2.5 dB; 200 nm; 5.6 dB; 50 micron; 6.7 dB; 90 GHz; CPWG HEMT low-noise amplifier; InAs-AlSb-GaAs; high electron mobility transistor technology; low-power W-band low-noise amplifier; single-stage coplanar waveguide with ground LNA; Circuits; Computer hacking; Doppler radar; Fabrication; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; Radar antennas; Radar imaging; Antimonide-based compound semiconductor (ABCS); InAs/AlSb; W-band; high electron mobility transistor (HEMT); low-noise amplifier (LNA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.861343
