Title :
A 1-V CMOS power amplifier for Bluetooth applications
Author :
Ho, Ka-Wai ; Luong, Howard C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
A two-stage power amplifier operated at 2.4 GHz is designed and fabricated in a standard 0.35-μm CMOS technology. A common-gate class-E power amplifier is employed for low-supply voltage operation without degrading the power-added efficiency (PAE). A preamplifier with positive feedback configuration is used to drive the common-gate output stage. The amplifier delivers 18-dB output power with 33% PAE under a 1-V supply voltage.
Keywords :
Bluetooth; CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; feedback amplifiers; integrated circuit design; switching circuits; 0.35 micron; 1 V; 2.4 GHz; 33 percent; Bluetooth applications; CMOS power amplifier; class-E power amplifier; common-gate output stage; common-gate power amplifier; low-supply voltage operation; positive feedback configuration; preamplifier; standard CMOS technology; switched-mode power amplifiers; two-stage power amplifier; Bluetooth; CMOS technology; Degradation; High power amplifiers; Operational amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches; Voltage;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
DOI :
10.1109/TCSII.2003.814803
