Title :
InGaN-CdSe-ZnSe quantum dots white LEDs
Author :
Chen, Hsueh-Shih ; Hsu, Cheng-Kuo ; Hong, Hsin-Yen
Author_Institution :
Union Chem. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
White light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chips with luminescent colloidal core-shell CdSe-ZnSe quantum dots (QDs). The core-shell CdSe-ZnSe QDs synthesized by thermal deposition approach exhibited high photoluminescence efficiency with a quantum yield more than ∼40%, and size-tunable emission wavelengths from 510 to 620 nm. Three-band red-green-blue WLED was successfully assembled by blue InGaN chips and green-emitting and red-emitting CdSe-ZnSe QDs. Based on QDs with flexibly selected color, the WLEDs exhibited white light with a CIE-1931 coordinate of (0.33, 0.33) and color rendering index Ra of 91.
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; photoluminescence; semiconductor quantum dots; zinc compounds; 510 to 620 nm; CIE-1931 coordinate; InGaN chips; InGaN-CdSe-ZnSe; InGaN-CdSe-ZnSe quantum dots; blue InGaN chips; colloidal core-shell quantum dots; color rendering index; green-emitting quantum dots; luminescent core-shell quantum dots; photoluminescence; quantum yield; red-emitting quantum dots; red-green-blue WLED; size-tunable emission wavelength; thermal deposition; three-band WLED; white LED; Assembly; Chemical technology; Electromagnetic wave absorption; Light emitting diodes; Luminescence; Phosphors; Photoluminescence; Quantum dots; US Department of Transportation; Zinc compounds; Light-emitting diodes (LEDs); phosphors; quantum dots (QDs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.859540
