Title :
1 W CW, 672 nm visible laser diodes
Author :
Serreze, H.B. ; Harding, C.M. ; Waters, R.G.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Opto-Electron. Centre, Elmsford, NY, USA
Abstract :
Visible laser diodes emitting at 672 nm and employing a GaInP strained-layer, single quantum well, graded-index separate confinement heterostructure (GRINSCH) design have been fabricated. CW output power in excess of 1 W and CW threshold current density as low as 305 A/cm2 were obtained from a coated, 60 mu m wide oxide stripe diode operating at 10 degrees C.
Keywords :
III-V semiconductors; gallium compounds; gradient index optics; indium compounds; laser transitions; semiconductor junction lasers; 1 W; 10 degC; 672 nm; CW output power; CW threshold current density; GRINSCH; GaInP; SQW; graded-index; semiconductor lasers; separate confinement heterostructure; single quantum well; strained-layer; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911389
