• DocumentCode
    764256
  • Title

    1 W CW, 672 nm visible laser diodes

  • Author

    Serreze, H.B. ; Harding, C.M. ; Waters, R.G.

  • Author_Institution
    McDonnell Douglas Electron. Syst. Co., Opto-Electron. Centre, Elmsford, NY, USA
  • Volume
    27
  • Issue
    24
  • fYear
    1991
  • Firstpage
    2245
  • Lastpage
    2246
  • Abstract
    Visible laser diodes emitting at 672 nm and employing a GaInP strained-layer, single quantum well, graded-index separate confinement heterostructure (GRINSCH) design have been fabricated. CW output power in excess of 1 W and CW threshold current density as low as 305 A/cm2 were obtained from a coated, 60 mu m wide oxide stripe diode operating at 10 degrees C.
  • Keywords
    III-V semiconductors; gallium compounds; gradient index optics; indium compounds; laser transitions; semiconductor junction lasers; 1 W; 10 degC; 672 nm; CW output power; CW threshold current density; GRINSCH; GaInP; SQW; graded-index; semiconductor lasers; separate confinement heterostructure; single quantum well; strained-layer; visible laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911389
  • Filename
    109513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=764256