Three-dimensional phototransistors in 3D silicon-on-insulator technology

Measurement results of phototransistors designed in a three-dimensional (3D) 0.18 mum silicon-on-insulator technology are presented. The phototransistors respond to light intensities of 5-200 000 lux with currents from 50 fA to 2.3 muA. The novelty of this phototransistor is that its photocurrent is proportional to the square of the incident light intensity. The device measurements reported show that the photodetectors can be used for the design of high-density imaging arrays in three-dimensional SOI CMOS fabrication processes