Title :
Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs
Author :
Stillman, W. ; Shur, M.S. ; Veksler, D. ; Rumyantsev, S. ; Guarin, F.
Author_Institution :
ECSE Dept., Rensselaer Polytech. Inst., NY
Abstract :
Results of room temperature measurement of nonresonant sub-terahertz detection by nanoscale silicon MOSFETs under a variety of load conditions are reported. The effect of device loading is incorporated into existing response models to explain diminished response in the sub-threshold region, and calculation of noise equivalent power indicates minima near the threshold voltage
Keywords :
MOSFET; elemental semiconductors; silicon; submillimetre wave detectors; Si; device loading effects; nonresonant detection; silicon MOSFET; terahertz radiation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20073475
