DocumentCode
764384
Title
Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs
Author
Stillman, W. ; Shur, M.S. ; Veksler, D. ; Rumyantsev, S. ; Guarin, F.
Author_Institution
ECSE Dept., Rensselaer Polytech. Inst., NY
Volume
43
Issue
7
fYear
2007
Firstpage
422
Lastpage
423
Abstract
Results of room temperature measurement of nonresonant sub-terahertz detection by nanoscale silicon MOSFETs under a variety of load conditions are reported. The effect of device loading is incorporated into existing response models to explain diminished response in the sub-threshold region, and calculation of noise equivalent power indicates minima near the threshold voltage
Keywords
MOSFET; elemental semiconductors; silicon; submillimetre wave detectors; Si; device loading effects; nonresonant detection; silicon MOSFET; terahertz radiation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20073475
Filename
4145312
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