• DocumentCode
    764516
  • Title

    Optimised device processing for continuous-wave operation in GaAs-based quantum cascade lasers

  • Author

    Page, H. ; Dhillon, S. ; Calligaro, M. ; Ortiz, V. ; Sirtori, C.

  • Author_Institution
    Thales Res. & Technol., Orsay, France
  • Volume
    39
  • Issue
    14
  • fYear
    2003
  • fDate
    7/10/2003 12:00:00 AM
  • Firstpage
    1053
  • Lastpage
    1055
  • Abstract
    A significant improvement in the maximum continuous-wave operating temperature of GaAs-based quantum cascade lasers, Tmax=140 K, is reported. This has been achieved through optimised device processing that significantly reduces the total power consumption of the device and hence its self-heating.
  • Keywords
    III-V semiconductors; gallium arsenide; quantum cascade lasers; thermal resistance; 140 K; GaAs; continuous-wave operation; operating temperature; optimised device processing; quantum cascade lasers; self-heating; total power consumption;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030680
  • Filename
    1220811