DocumentCode
764516
Title
Optimised device processing for continuous-wave operation in GaAs-based quantum cascade lasers
Author
Page, H. ; Dhillon, S. ; Calligaro, M. ; Ortiz, V. ; Sirtori, C.
Author_Institution
Thales Res. & Technol., Orsay, France
Volume
39
Issue
14
fYear
2003
fDate
7/10/2003 12:00:00 AM
Firstpage
1053
Lastpage
1055
Abstract
A significant improvement in the maximum continuous-wave operating temperature of GaAs-based quantum cascade lasers, Tmax=140 K, is reported. This has been achieved through optimised device processing that significantly reduces the total power consumption of the device and hence its self-heating.
Keywords
III-V semiconductors; gallium arsenide; quantum cascade lasers; thermal resistance; 140 K; GaAs; continuous-wave operation; operating temperature; optimised device processing; quantum cascade lasers; self-heating; total power consumption;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030680
Filename
1220811
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