Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communication

Author

Shi, J.-W. ; Huang, H.-Y. ; Sheu, J.K. ; Hsieh, S.-H. ; Wu, Y.-S. ; Lu, Ja-Yu ; Huang, F.-H. ; Lai, W.C.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taiwan, Taiwan

Volume

18

Issue

1

fYear

2006

Firstpage

283

Lastpage

285

Abstract

We demonstrate a GaN-based waveguide photodiode at a wavelength of around 510 nm for plastic optical fiber communication. Compared with the performance of an Si-based photodiode in the same wavelength regime, our device can achieve better external efficiency. It also enjoys the unique advantage of monolithic integration with the GaN-based green-amber light-emitting-diode (LED). Our demonstrated photodiode exhibits high external efficiency (73%) and a 600-MHz electrical bandwidth. Under forward bias, this device can also serve as a transmitter (LED), and the measured optical center wavelength is around 515 nm with a 70-MHz electrical bandwidth.

Keywords

III-V semiconductors; gallium compounds; integrated optoelectronics; light emitting diodes; monolithic integrated circuits; optical fibre communication; optical transmitters; optical waveguides; photodiodes; 510 nm; 515 nm; 600 MHz; 70 MHz; GaN; GaN-based waveguide photodiode; forward bias; green-amber light-emitting-diode; monolithic integration; nitride-based photodiode; optical transmitter; plastic optical fiber communication; Bandwidth; Electric variables measurement; Light emitting diodes; Monolithic integrated circuits; Optical fiber communication; Optical transmitters; Optical waveguides; Photodiodes; Plastics; Wavelength measurement; High efficiency; high-power photodiode; optical fiber; optical receivers; photodiode;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.861312

Filename

1561359