DocumentCode
764626
Title
Highly reliable 100 mW operation of broad area InGaAlP visible light laser diodes
Author
Itaya, Kazuhiko ; Shimada, N. ; Hatakoshi, G.
Author_Institution
Toshiba Corp. Res. & Dev. Center, Kawasaki, Japan
Volume
27
Issue
24
fYear
1991
Firstpage
2257
Lastpage
2259
Abstract
The aging characteristics of broad area InGaAlP visible light laser diodes have been investigated. Asymmetric coatings and a highly p-doped cladding layer were employed. Highly reliable operation, as high as 100 mW for more than 2000 h has been realised at 15 degrees C.
Keywords
III-V semiconductors; ageing; aluminium compounds; gallium compounds; indium compounds; reliability; semiconductor junction lasers; 100 mW; 15 degC; 2000 hr; InGaAlP; aging characteristics; asymmetric coatings; broad area laser structure; highly p-doped cladding layer; laser diodes; reliable operation; visible light;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911396
Filename
109520
Link To Document