Title :
Ultrahigh-speed 1.5 mu m narrow-contact planar BH-DFB lasers with 16.5 GHz cutoff frequency
Author :
Matsuyama, Takashi ; Kobayashi, Hideo ; Ohtsuka, K. ; Kinoshita, J.
Author_Institution :
Toshiba Electron. Eng. Corp., Yokohama, Japan
Abstract :
Ultrahigh-speed 1.5 mu m narrow-contact planar BH-DFB lasers which have a lightly-doped InP buried layer are developed. A cutoff frequency as high as 16.5 GHz is achieved at 80 mA. This excellent high-speed performance is attained by reducing the chip parasitic capacitance and by detuning the oscillating wavelength to be lower than the gain peak. Main contributions to the capacitance reduction are the lightly-doped buried layer and a very narrow p-electrode contact.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; semiconductor junction lasers; 1.5 micron; 16.5 GHz; 80 mA; InGaAsP-InP; InP buried layer; capacitance reduction; chip parasitic capacitance; cutoff frequency; high-speed performance; narrow-contact; oscillating wavelength detuning; p-electrode contact; planar BH-DFB lasers; semiconductor lasers; ultrahigh speed lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911399
