GaAs vertical PIN diode using MeV implantation

Author

Rao, Mulpuri V. ; Kruppa, W. ; Dietrich, H.B. ; Binari, S.C. ; Boss, J.B.

Author_Institution

SFA Inc., Landover, MD, USA

Volume

27

Issue

24

fYear

1991

Firstpage

2265

Lastpage

2267

Abstract

For high-power microwave switching, PIN diodes are preferred over MESFETs due to their higher breakdown voltage, lower on-state resistance, and lower off-state capacitance. The authors have fabricated vertical PIN diodes using MeV Si/S coimplantation and keV Be/P coimplantation into undoped semi-insulating GaAs to obtain buried n⁺ and surface p⁺ regions respectively. An exploratory device with a 500*500 mu m² junction area and a 3 mu m thick intrinsic region has a breakdown voltage of 70 V, reverse leakage current density of 40 mu A/cm² at 20 V, an off-state capacitance of 3.9 nF/cm² and a DC forward resistance of 2.4 Omega at 100 mA.

Keywords

III-V semiconductors; electric breakdown of solids; gallium arsenide; ion implantation; leakage currents; p-i-n diodes; semiconductor doping; semiconductor switches; solid-state microwave devices; 2.4 ohm; 70 V; DC forward resistance; GaAs:Be,P; GaAs:Si,S; MeV implantation; breakdown voltage; buried n⁺ region; coimplantation; high-power microwave switching; reverse leakage current density; surface p⁺ regions; undoped semi-insulating GaAs; vertical PIN diode;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19911401

Filename

109525