Title :
High isolation and low insertion loss switch IC using GaAs MESFET´s
Author :
Ota, Yorito ; Sakakura, Makoto ; Fujimoro, K. ; Yamamoto, Shinji ; Fujimoto, Hiromasa
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
9/1/1995 12:00:00 AM
Abstract :
A novel RF switch IC using GaAs MESFET´s has been developed for digital communication systems. The new IC is composed of a three-stage SPST switch and a thin film termination resistor, which realizes a high isolation and a low return loss. In addition, a high power handling capability and a low insertion loss are simultaneously realized with two kinds of pinch-off voltages using the orientation effect of GaAs MESFET´s. According to these technologies, the excellent performance is achieved as follows: the isolation of 60 dB, the return loss of 20 dB, the 1 dB power compression of 27 dBm and the insertion loss of 1.6 dB at a frequency of 1.9 GHz with control voltages of 0/-5 V. The new switch IC contributes to a variety of communication system using high-quality digital modulation
Keywords :
III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; field effect transistor switches; gallium arsenide; 0 to 5 V; 1.6 dB; 1.9 GHz; 20 dB; GaAs; GaAs MESFETs; RF switch IC; digital communication systems; digital modulation; insertion loss; isolation; orientation effect; pinch-off voltages; power compression; power handling; return loss; thin film termination resistor; three-stage SPST switch; Communication switching; Digital communication; Digital integrated circuits; Gallium arsenide; Insertion loss; MESFET integrated circuits; Radio frequency; Radiofrequency integrated circuits; Switches; Transistors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
