Title :
High-power InGaAs-on-Si pin RF photodiodes
Author :
Tulchinsky, D.A. ; Williams, K.J. ; Pauchard, A. ; Bitter, M. ; Pan, Z. ; Hodge, L. ; Hummel, S.G. ; Lo, Y.H.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
7/10/2003 12:00:00 AM
Abstract :
High-power InGaAs-on-Si RF pin photodetectors are demonstrated. These diodes dissipate upwards of 640 mW of electrical power, have small-signal compression currents of 91.4 mA at 200 MHz and 71.5 mA at 300 MHz, and dark currents are measured to be less than 10 nA.
Keywords :
III-V semiconductors; dark conductivity; elemental semiconductors; gallium arsenide; indium compounds; microwave photonics; p-i-n photodiodes; photodetectors; silicon; 10 nA; 200 MHz; 300 MHz; 640 mW; 71.5 mA; 91.4 mA; InGaAs-Si; InGaAs-on-Si; dark currents; electrical power; photodetectors; pin RF photodiodes; small-signal compression currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030693
