DocumentCode
764710
Title
Dry etching process for fabrication of optoelectronic gratings in III-V substrates
Author
Gozdz, A.S. ; Shelburne, J.A. ; Robinson, R.S. ; Chang, C.C.
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
27
Issue
24
fYear
1991
Firstpage
2270
Lastpage
2271
Abstract
A novel, three-step dry etching process for the fabrication of first-order diffraction gratings in III-V semiconductors is reported. The process takes advantage of the etching of thin films of SiO2 and of a sensitive, organosilicon electron-beam resist by the H2/CH4 plasma. It reduces wafer handling and eliminates wet stripping of the resist. The gratings were imaged with a scanning tunnelling microscope.
Keywords
III-V semiconductors; diffraction gratings; electron beam lithography; optical workshop techniques; optoelectronic devices; semiconductor technology; sputter etching; substrates; DBR lasers; DFB lasers; H 2/CH 4 plasma; III-V semiconductors; III-V substrates; InP; RIE; SiO 2 thin films; fabrication; first-order diffraction gratings; optoelectronic gratings; organosilicon electron-beam resist; reactive ion etching; three-step dry etching process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911404
Filename
109528
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