DocumentCode :
764723
Title :
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors
Author :
Zhang, J. ; Boiadjieva, N. ; Chulkova, G. ; Deslandes, H. ; Tsman, G. N Gol ; Korneev, Alexander ; Kouminov, P. ; Leibowitz, M. ; Lo, W. ; Malinsky, R. ; Okunev, O. ; Pearlman, A. ; Slysz, W. ; Smirnov, K. ; Tsao, C. ; Verevkin, A. ; Voronov, B. ; Wilsher
Author_Institution :
Dept. of Electr., Univ. of Rochester, NY, USA
Volume :
39
Issue :
14
fYear :
2003
fDate :
7/10/2003 12:00:00 AM
Firstpage :
1086
Lastpage :
1088
Abstract :
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
Keywords :
CMOS integrated circuits; infrared detectors; integrated circuit testing; niobium compounds; superconducting photodetectors; near-infrared photon emission; noninvasive CMOS circuit testing; switching MOS transistor; thick-film meander-structure NbN superconducting single-photon detector;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030710
Filename :
1220832
Link To Document :
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