Title :
ESD investigation of pn junction diodes in silicon-germanium heterojunction bipolar transistor
Author :
Chou, C.H. ; Chen, S.S. ; Tang, T.H.
Author_Institution :
Div. of Teacher Educ., Providence Univ., Taichung Hsien, Taiwan
fDate :
7/10/2003 12:00:00 AM
Abstract :
The electrostatic discharge (ESD) characteristics of the pn junction diodes with different configurations in a silicon-germanium heterojunction bipolar transistor (SiGe HBT) based on a 0.18 μm SiGe BiCMOS process is investigated. From the measured results, for the thin-base SiGe HBT, the base-collector junction diode shows the best ESD performance among all kinds of diode configurations owing to its large junction area.
Keywords :
Ge-Si alloys; electrostatic discharge; heterojunction bipolar transistors; p-n junctions; semiconductor materials; 0.18 micron; BiCMOS process; ESD investigation; SiGe; base-collector junction diode; diode configurations; electrostatic discharge characteristics; heterojunction bipolar transistor; junction area; pn junction diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030677
