Temperature Sensor Made of Amorphous Indium–Gallium–Zinc Oxide TFTs

Author

Hoon Jeong ; Chung Sik Kong ; Sung Wook Chang ; Kwon Shik Park ; Sang Gul Lee ; Yong Min Ha ; Jin Jang

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1569

Lastpage

1571

Abstract

We report temperature sensors with amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The threshold voltage of a-IGZO TFTs shows linear dependency with temperature, which enables them to be used for temperature sensing. The single TFT sensor is simple, but its sensitivity is not high. However, significantly better sensitivity can be achieved by connecting several TFTs in a parallel series to create a multi-TFT sensor. The performances of the TFT sensors fabricated both for single and multi-TFTs are well matched with simulation results.

Keywords

II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; temperature sensors; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; amorphous indium-gallium-zinc oxide TFT; linear dependency; single TFT sensor; temperature sensor; thin-film transistors; threshold voltage; Indium gallium zinc oxide; Temperature dependence; Temperature sensors; Thermal sensors; Thin film transistors; Amorphous indium–gallium–zinc oxide (a-IGZO); temperature dependence; temperature sensor; thermal sensor; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2286824

Filename

6651740