Title :
Effect of Adjacent Layers on Crystallization and Magnetoresistance in CoFeB/MgO/CoFeB Magnetic Tunnel Junction
Author :
Park, Chando ; Wang, Yung-Hung ; Laughlin, David E. ; Zhu, Jian-Gang
Author_Institution :
Data Storage Syst. Center, Carnegie Mellon Univ., Pittsburgh, PA
Abstract :
Crystallization must occur in order to obtain lattice matching between CoFeB and MgO in amorphous CoFeB/MgO/amorphous CoFeB magnetic tunnel junction (MTJ). However, the interface layer effect on the crystallization behavior is not yet clear. An aim of our experiments was to investigate the effects of various layers including Ta, MgO, Ru, and NiFe on the crystallization and transport properties in CoFeB/MgO/CoFeB MTJs deposited on SiO2/Si and glass. It was found that the onset of crystallization of CoFeB and its specific orientation were dependent on the layer adjacent to CoFeB. The effects of crystallization on transport properties are also discussed
Keywords :
cobalt compounds; crystallisation; iron compounds; magnesium compounds; nickel compounds; ruthenium; silicon compounds; tantalum; transport processes; tunnelling magnetoresistance; CoFeB-MgO-CoFeB; NiFe; Ru; SiO2-Si; Ta; adjacent layers; crystallization; interface layer effect; magnetic tunnel junction; magnetoresistance; transport property; Amorphous magnetic materials; Amorphous materials; Annealing; Crystallization; Electrons; Glass; Iron; Magnetic tunneling; Tunneling magnetoresistance; X-ray scattering; CoFeB; MgO barrier; crystallization;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.879739
