DocumentCode :
764880
Title :
Tunnel Magnetoresistance Effect in CoFeB/MgO/Co 
FeSi and Co MnSi Tunnel Junctions
FeSi and Co MnSi Tunnel JunctionsAuthor :
Daibou, T. ; Shinano, M. ; Hattori, M. ; Sakuraba, Y. ; Oogane, M. ; Ando, Y. ; Miyazaki, T.
Author_Institution :
Graduate Sch. of Eng., Tohoku Univ., Sendai
Volume :
42
Issue :
10
fYear :
2006
Firstpage :
2655
Lastpage :
2657
Abstract :
We have fabricated MgO-based magnetic tunnel junctions (MTJs) with the CoFeB bottom electrode and top electrodes of poly crystalline Co2FeSi and Co2MnSi Heusler alloys. We have measured temperature dependence of the TMR ratio and TMR-V characteristics at 6 K. We have achieved a high TMR ratio of 90% at RT for the MTJ with Co2FeSi electrode after annealing at 325degC. The MTJ with Co2MnSi electrode showed a significant annealing temperature dependence of the TMR ratio. The increase of TMR ratio by annealing is due to the crystallization of the Co2MnSi Heusler layer. Furthermore, the strong temperature dependence of TMR ratio and the anomalous TMR-V characteristics have been observed in the MTJ with Co2MnSi
Keywords :
boron alloys; cobalt alloys; iron alloys; magnesium compounds; magnetic multilayers; silicon alloys; tunnelling magnetoresistance; 325 C; 6 K; Co2MnSi; CoFeB-MgO-Co2FeSi; Heusler alloys; TMR ratio; TMR-V characteristics; annealing temperature dependence; magnetic tunnel junctions; tunnel magnetoresistance; Amorphous magnetic materials; Annealing; Cobalt alloys; Crystallization; Electrodes; Insulation; Magnetic tunneling; Polarization; Temperature dependence; Tunneling magnetoresistance; CoFeB; Heusler alloys; MTJs; MgO;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2006.879733
Filename :
1704395
Link To Document :
