Optically transparent ITO emitter contacts in the fabrication of InP/InGaAs HPT´s

Author

Bashar, Shabbir A. ; Rezazadeh, Ali A.

Author_Institution

Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK

Volume

43

Issue

9

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

2299

Lastpage

2303

Abstract

An optically transparent emitter InP/InGaAs heterojunction phototransistor (HPT) fabricated using Indium Tin Oxide (ITO) as the ohmic contact is presented for the first time; these devices show similar electrical characteristics to their opaque emitter counterparts and enhanced optical responsivities (5.4 A/W at 780 nm wavelength). Measured spectral response suggests responsivities of up to 30 A/W and 22 A/W at λ=1310 nm and 1550 nm respectively

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; ohmic contacts; phototransistors; semiconductor technology; 780 to 1550 nm; ITO; InP-InGaAs; InSnO; electrical characteristics; heterojunction phototransistor; ohmic contact; optical responsivities; optically transparent emitter contacts; spectral response; Electric variables; Heterojunctions; Indium gallium arsenide; Indium phosphide; Indium tin oxide; Ohmic contacts; Optical device fabrication; Optical devices; Phototransistors; Stimulated emission;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.414581

Filename

414581