Title :
Optically transparent ITO emitter contacts in the fabrication of InP/InGaAs HPT´s
Author :
Bashar, Shabbir A. ; Rezazadeh, Ali A.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK
fDate :
9/1/1995 12:00:00 AM
Abstract :
An optically transparent emitter InP/InGaAs heterojunction phototransistor (HPT) fabricated using Indium Tin Oxide (ITO) as the ohmic contact is presented for the first time; these devices show similar electrical characteristics to their opaque emitter counterparts and enhanced optical responsivities (5.4 A/W at 780 nm wavelength). Measured spectral response suggests responsivities of up to 30 A/W and 22 A/W at λ=1310 nm and 1550 nm respectively
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; ohmic contacts; phototransistors; semiconductor technology; 780 to 1550 nm; ITO; InP-InGaAs; InSnO; electrical characteristics; heterojunction phototransistor; ohmic contact; optical responsivities; optically transparent emitter contacts; spectral response; Electric variables; Heterojunctions; Indium gallium arsenide; Indium phosphide; Indium tin oxide; Ohmic contacts; Optical device fabrication; Optical devices; Phototransistors; Stimulated emission;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
