Temperature dependences of Ga/sub 0.66/In/sub 0.34/As-InP tensile-strained quasi-quantum-wire laser fabricated by wet chemical etching and 2-step OMVPE growth

Author

Shin, Ki-Chul ; Arai, Shigehisa ; Nagashima, Yasuaki ; Kudo, Koji ; Tamura, Shigeo

Author_Institution

Centre for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

Volume

7

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

345

Lastpage

347

Abstract

Temperature dependences of threshold current and differential quantum efficiency of Ga/sub 0.66/In/sub 0.34/As-InP tensile-strained quasiquantum-wire laser were measured, and were compared with those of quantum-well-film lasers fabricated on the same wafer. It was found that nonradiative recombination rate was not enhanced in the quasiquantum-wire laser compared with that of the quantum-well-film laser.<>

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 2-step OMVPE growth; Ga/sub 0.66/In/sub 0.34/As-InP tensile-strained quasi-quantum-wire laser; GaInAs-InP; differential quantum efficiency; laser fabrication; nonradiative recombination rate; quantum-well-film laser; quantum-well-film lasers; quasiquantum-wire laser; temperature dependences; threshold current; wet chemical etching; Chemical lasers; Optical losses; Quantum well devices; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature dependence; Threshold current; Wet etching; Wire;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.376797

Filename

376797