Title :
Temperature dependences of Ga/sub 0.66/In/sub 0.34/As-InP tensile-strained quasi-quantum-wire laser fabricated by wet chemical etching and 2-step OMVPE growth
Author :
Shin, Ki-Chul ; Arai, Shigehisa ; Nagashima, Yasuaki ; Kudo, Koji ; Tamura, Shigeo
Author_Institution :
Centre for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fDate :
4/1/1995 12:00:00 AM
Abstract :
Temperature dependences of threshold current and differential quantum efficiency of Ga/sub 0.66/In/sub 0.34/As-InP tensile-strained quasiquantum-wire laser were measured, and were compared with those of quantum-well-film lasers fabricated on the same wafer. It was found that nonradiative recombination rate was not enhanced in the quasiquantum-wire laser compared with that of the quantum-well-film laser.<>
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 2-step OMVPE growth; Ga/sub 0.66/In/sub 0.34/As-InP tensile-strained quasi-quantum-wire laser; GaInAs-InP; differential quantum efficiency; laser fabrication; nonradiative recombination rate; quantum-well-film laser; quantum-well-film lasers; quasiquantum-wire laser; temperature dependences; threshold current; wet chemical etching; Chemical lasers; Optical losses; Quantum well devices; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature dependence; Threshold current; Wet etching; Wire;
Journal_Title :
Photonics Technology Letters, IEEE
