Electrical Control of Ballistic Spin-Dependent Conductance Through the 2D-Electron Gas of GaAs Heterostructure

Author

Tan, S.G. ; Jalil, M.B.A. ; Kumar, Bala S. ; Teo, K.L. ; Zheng, Y.K. ; Liew, Thomas

Author_Institution

Data Storage Inst., Nat. Univ. of Singapore

Volume

42

Issue

10

fYear

2006

Firstpage

2673

Lastpage

2675

Abstract

We investigated the effect of magnetic-electric barriers on electron transport in the two-dimensional electron gas (2DEG) of a AlGaAs-GaAs heterostructure. It is found that electric potential can be controlled to achieve both spin and charge conductance modulation in this material system, with the requisite condition being the presence of magnetic barriers to break the time reversal symmetry of the system. The use of electrical potential rather than applied magnetic fields as an external control parameter to achieve spin/charge conductance modulation promises a simpler device design for practical realization

Keywords

III-V semiconductors; aluminium compounds; ballistic transport; gallium arsenide; magnetic multilayers; spin polarised transport; two-dimensional electron gas; 2D-electron gas; AlGaAs-GaAs; ballistic spin-dependent conductance; charge conductance modulation; electrical control; electrical potential; electron transport; external control parameter; magnetic-electric barriers; resonant tunneling; spin modulation; spin-polarized current; Conducting materials; Electric potential; Electrons; Gallium arsenide; HEMTs; Magnetic fields; Magnetic materials; Magnetic modulators; Material storage; Switches; Ballistic; device; resonant tunneling; spin-polarized current;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.878844

Filename

1704401