DocumentCode
765260
Title
Anisotropy Field Change by Annealing in He+/Ne+ Ion-Implanted Bubble Garnet Films
Author
Imura, R. ; Ikeda, T. ; Sugita, Y. ; Suzuki, R.
Author_Institution
Central Research Lab., Hitachi Ltd., Kokubunji
Volume
1
Issue
5
fYear
1985
Firstpage
564
Lastpage
565
Abstract
Bubble garnet films, (YSmLuGd)3 (FeGa)5 O12 , were implanted with He, N, and Ne ions at 100-200 keV and annealed at 350 to 600°C, and changes in the maximum lattice strain, (¿a/a)max , and in the effective anisotropy field, ¿(Hk -47¿Ms ), were measured by double-crystal X-ray diffraction and ferromagnetic resonance. Lattice strain in layers implanted with He, N, and Ne ions decreased monotonically with annealing. The change in anisotropy field initially increases with heat treatment for samples implanted with heavy ion doses, then decreases. This increase was attributed to changes in the saturation magnetization Ms and magnetostriction coefficient ¿111 .
Keywords
Anisotropic magnetoresistance; Annealing; Garnet films; Helium; Lattices; Magnetic field induced strain; Magnetic field measurement; Magnetic resonance; Strain measurement; X-ray diffraction;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1985.4548863
Filename
4548863
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