Low voltage GaAs on Si reflection modulators with 51% reflection change

A GaAs/GaAlAs multiquantum well reflection modulator grown on an Si substrate which shows a 51% reflection change, and a 9.3 dB contrast ratio, for only 8 V bias is reported. The device uses an asymmetric Fabry-Perot cavity to enhance the electroabsorptive modulation and was grown by MOVPE. The devices have low dark currents (3 nA at 10 V reverse bias) and high optical quality. These results have important implications for applications such as optical interconnects and integration of optoelectronic devices with Si electronics.