Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

Author

Ducatteau, D. ; Minko, A. ; Hoel, Virginie ; Morvan, E. ; Delos, E. ; Grimbert, B. ; Lahreche, H. ; Bove, P. ; Gaquiere, C. ; De Jaeger, J.C. ; Delage, S.

Author_Institution

IEMN-TIGER, Lille Univ., Villeneuve d´Ascq, France

Volume

27

Issue

1

fYear

2006

Firstpage

7

Lastpage

9

Abstract

Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (F_T) of 50 GHz are achieved for a 0.25 μm gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2×50×0.25 μm² HEMT with a power gain of 9.1dB.

Keywords

III-V semiconductors; aluminium compounds; current density; elemental semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device measurement; silicon; substrates; wide band gap semiconductors; 0.25 micron; 18 GHz; 50 GHz; 9.1 dB; AlGaN-GaN-Si; dc current density; high electron mobility transistors; high resistive silicon substrate; microwave frequency capabilities; power density; trapping effects; Aluminum gallium nitride; Current density; Cutoff frequency; Gallium nitride; HEMTs; MODFETs; Microwave frequencies; Power generation; Pulse measurements; Silicon; AlGaN/GaN; Si (111); high electron mobility transistors (HEMTs); power density; trapping effects;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.860385

Filename

1561438