DocumentCode
765528
Title
Perpendicular Magnetic Anisotropy of Tb-Co Amorphous Films Sputtered In H2 -Added Ar Gas
Author
Niihara, T. ; Takayama, S. ; Kaneko, K. ; Sugita, Y.
Author_Institution
Central Research Laboratory, Hitachi Ltd.
Volume
1
Issue
5
fYear
1985
Firstpage
627
Lastpage
628
Abstract
Tb-Co amorphous films are prime candidates for use as magneto-optical recording media, but the method commonly employed to induce a perpendicular magnetic anisotropy, bias sputtering, is not compatible with glass substrates. In this case RF sputtering is used in an H2 -Ar gas mixture, without a substrate bias voltage, to form Tb-Co films. As the hydrogen partial pressure PH2 was increased, the film saturation magnetization Ms decreased, the uniaxial anisotropy constant Ku increased, and the Kerr hysteresis loop became more rectangular. For PH2 = 10 percent, samples had an extremely large positive anisotropy even when the Tb content was varied over a wide range.
Keywords
Amorphous materials; Anisotropic magnetoresistance; Glass; Hydrogen; Magnetic films; Magnetooptic recording; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Sputtering; Substrates;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1985.4548890
Filename
4548890
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