Title :
A Schottky-contact triangular-barrier optoelectronic switch (STOS)
Author_Institution :
Dept. of Electron. Eng., Air Force Acad., Kaohsiung, Taiwan
Abstract :
A Schottky-contact triangular-barrier optoelectronic switch (STOS), grown by molecular beam epitaxy, has been fabricated. The triangular barrier, formed by inserting an InGaAs delta-doped (δ-doped) quantum well into an n--GaAs layer, provides a potential well for hole accumulation. Due to the hole accumulation in the δ-doped well and the sequential avalanche multiplications in the reverse-biased p-n and metal-semiconductor junctions, a double S-shaped negative-differential-resistance phenomenon is observed in the current-voltage (I-V) characteristics. The STOS shows a flexible optical function related to the triangular barrier height controllable by incident light. The multistate is switchable by both optical and electrical inputs.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; avalanche breakdown; gallium arsenide; indium compounds; molecular beam epitaxial growth; optoelectronic devices; p-n junctions; quantum well devices; semiconductor device breakdown; semiconductor quantum wells; semiconductor switches; semiconductor-metal boundaries; InGaAs; Schottky-contact triangular-barrier optoelectronic switch; current-voltage characteristics; delta-doped quantum wells; double 5-shaped negative-differential-resistance phenomenon; flexible optical function; hole accumulation; metal-semiconductor junctions; molecular beam epitaxial growth; reverse-biased p-n junction; sequential avalanche multiplication; triangular barrier height; Communication switching; Indium gallium arsenide; Molecular beam epitaxial growth; Optical bistability; Optical devices; Optical switches; P-n junctions; Potential well; Stimulated emission; Voltage; Avalanche multiplication; hole accumulation; negative differential resistance; optoelectronic switch; triangular barrier;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.860620
