A new analog buffer using P-type poly-Si TFTs for active matrix displays

Author

Jung, Sang-Hoon ; Nam, Woo-Jin ; Lee, Jae-Hoon ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

27

Issue

1

fYear

2006

Firstpage

40

Lastpage

42

Abstract

A new simple analog buffer employing p-type low-temperature poly-Si thin-film transistors (TFTs) are proposed and fabricated for the integrated data driving circuits of AMLCD and AMOLED. The new analog buffer does not use any capacitors to store the threshold voltage of a poly-Si TFT, so that it could reduce the output offset by the subthreshold current of poly-Si TFT. The simulation and experimental result exhibit that the buffer output successfully charges the buffer load (∼20 pF) to the input value quickly by the boot-strapping. The measured output offset voltages are less than ±70 mV when the input varies from 1 to 10 V.

Keywords

analogue circuits; bootstrap circuits; buffer circuits; driver circuits; elemental semiconductors; liquid crystal displays; organic light emitting diodes; silicon; thin film circuits; thin film transistors; 1 to 10 V; 20 pF; active matrix displays; analog buffer; boot strapping; integrated data driving circuits; p-type low temperature poly-Si thin-film transistors; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Buffer storage; Capacitors; Circuits; Operational amplifiers; Subthreshold current; Thin film transistors; Threshold voltage; Timing; Analog buffer; PMOS; boot-strapping; driving circuit; poly-Si thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.859949

Filename

1561449