DocumentCode :
76559
Title :
Effect of Magnetic Bias on Nonlinear Scattering by Stacked Semiconductor Layers
Author :
Shramkova, O.V.
Author_Institution :
Sch. of Electron., Electr. Eng. & Comput. Sci., Queen´s Univ. Belfast, Belfast, UK
Volume :
3
Issue :
6
fYear :
2013
fDate :
Nov. 2013
Firstpage :
798
Lastpage :
804
Abstract :
The properties of the three-wave interaction and wave scattering by periodic stacks of nonlinear semiconductor layers with external magnetic bias have been explored, taking into account the nonlinear charge dynamics. It has been shown that the mixing processes in magnetoactive semiconductor structures are enhanced by the magnetic bias and the combinations of layer physical and geometrical parameters. The effects of magnetic bias on nonreciprocity of combinatorial frequency generation are discussed.
Keywords :
magnetic semiconductors; multiwave mixing; semiconductor thin films; combinatorial frequency generation; geometrical parameters; magnetic bias; magnetoactive semiconductor structures; mixing; nonlinear charge dynamics; nonlinear scattering; nonreciprocity; stacked semiconductor layers; three wave interaction; wave scattering; Magnetic multilayers; Magnetic resonance; Magnetic semiconductors; Magnetoacoustic effects; Metamaterials; Periodic structures; Combinatorial frequency generation; magnetic field; nonlinear periodic structure; nonlinear semiconductor; nonreciprocity; three-wave mixing;
fLanguage :
English
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-342X
Type :
jour
DOI :
10.1109/TTHZ.2013.2286259
Filename :
6651747
Link To Document :
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