Effect of Resputtering on Perpendicular Magnetic Anisotropy in Amorphous GdCo Thin Films

In order to control resputtering during the sputtering formation of amorphous thin films, a wire mesh in DC sputtering equipment were used to suppress resputtering, and the effects of resputtering on magnetic anisotropy in GdCo films were studied. The measured values for Keff and Ms indicated that nearly all films had in-plane magnetizations, and under the film deposition conditions, through which resputtering did not occur, a perpendicular magnetic anisotropy was not induced. Possible reasons for this include a low deposition rate (~15 Ã…/min) and small film thicknesses (650 Ã…).