Title :
Temperature-dependent modeling of gallium arsenide MESFETs
Author :
Lardizabal, Steven M. ; Fernandez, Allen S. ; Dunleavy, Lawrence P.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
A complete temperature-dependent small signal model extraction methodology is used to achieve accurate circuit level simulations of metal semiconductor field-effect transistor (MESFET) amplifier performance over temperature. The procedure applies a previously described field-effect transistor (FET) modeling approach to predict the performance of a small signal amplifier over a -55°C to 100°C temperature range. This work includes a description of the MESFET equivalent circuit element thermal coefficients along with an amplifier simulation. Therefore, for the first time, a clear correspondence between circuit level simulation and measured results over temperature are published together. A new comparison of published temperature-dependent data shows a common agreement for amplifier gain variations of 0.015 dB/°C/Stage for a broad range of designs from 400 K down to cryogenic levels (77 K)
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; circuit analysis computing; cryogenic electronics; equivalent circuits; gallium arsenide; integrated circuit modelling; -55 to 100 degC; GaAs; MESFET amplifier performance; MMICs; amplifier gain variations; circuit level simulations; cryogenic levels; equivalent circuit element; small signal model extraction methodology; temperature-dependent data; temperature-dependent modeling; Circuit simulation; Equivalent circuits; FETs; Gallium arsenide; MESFET circuits; MESFET integrated circuits; Predictive models; Semiconductor optical amplifiers; Temperature distribution; Temperature measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
