Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion

Author

Ramdane, A. ; Krauz, P. ; Rao, E.V.K. ; Hamoudi, A. ; Ougazzaden, A. ; Robein, D. ; Gloukhian, A. ; Carre, M.

Author_Institution

France Telecom, CNET, Bagneux, France

Volume

7

Issue

9

fYear

1995

Firstpage

1016

Lastpage

1018

Abstract

A new approach using a cap-annealing partial disordering technique is demonstrated for 1.55-μm multiple-quantum-well (MQW) distributed feedback (DFB) laser-external electroabsorption modulator monolithic integration. Good static performances of the light source (15 mA threshold current, 14-dB on-off ratio for a 4-V voltage swing) are reported using this technique that preserves the material optical and electrical quality.

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; quantum well lasers; 1.55 mum; 15 mA; 4 V; InGaAsP-InP strained-layer distributed feedback laser; cap-annealing partial disordering technique; electrical quality; external electroabsorption modulator; external modulator; light source; monolithic integration; on-off ratio; optical quality; selective quantum-well interdiffusion; static performances; threshold current; voltage swing; Distributed feedback devices; Laser feedback; Light sources; Monolithic integrated circuits; Optical feedback; Optical materials; Optical modulation; Quantum well devices; Threshold current; Threshold voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.414687

Filename

414687