• DocumentCode
    76617
  • Title

    Automatic Charge Balancing Content Addressable Memory With Self-control Mechanism

  • Author

    Kun-Lin Tsai ; Yen-Jen Chang ; Yu-Cheng Cheng

  • Author_Institution
    Dept. of Electr. Eng., Tunghai Univ., Taichung, Taiwan
  • Volume
    61
  • Issue
    10
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    2834
  • Lastpage
    2841
  • Abstract
    Content addressable memory (CAM) is widely used in many applications, especially for those applications needing fast memory access. However, due to the parallel comparison feature and the frequent precharge/discharge of match-lines, the power consumption of CAM is considerable. In this paper, a fast and automatic charge balancing CAM architecture is proposed to control the voltage swing of match-lines so that the huge power consumption of CAM can be reduced. In the proposed design, the complementary property of the N-type CAM and the P-type CAM is used to balance the charge of match-lines. Especially, no specific sense amplifier is needed to detect the match status of match-lines. For a translation lookaside buffer example with 128 memory entries, the experimental result shows that 25.98% dynamic power and 3.30% leakage power can be reduced by using TSMC 90 nm CMOS process with 1.2 V supply voltage and only 2.23% circuit area is increased when compared with the traditional design.
  • Keywords
    CMOS integrated circuits; buffer circuits; content-addressable storage; low-power electronics; voltage control; N-type CAM; P-type CAM; TSMC CMOS process; automatic charge balancing; complementary property; content addressable memory; dynamic power; leakage power; match-lines; memory access; memory entries; power consumption; precharge-discharge; self-control mechanism; size 90 nm; translation lookaside buffer; voltage 1.2 V; voltage swing control; Computer aided manufacturing; Computer architecture; Discharges (electric); MOS devices; Microprocessors; Power demand; Transistors; Charge balance; content addressable memory (CAM); low power; match-line; self-control; translation lookaside buffer (TLB);
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2014.2335651
  • Filename
    6902832