Title :
Exchange Bias Between ZnCoO and IrMn
Author :
Huang, Po-Hsiang ; Lai, Chih-Huang ; Yang, Chih-An ; Huang, Hsin-Hung ; Chin, T.S. ; Chen, Chia-Hao ; Lan, Ming-Der ; Huang, Hsin-Erh ; Bor, Hui-Yun
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ.
Abstract :
High-quality epitaxial ZnCo0.07O films deposited at room temperature were obtained by using reactive ion beam sputtering. Room-temperature ferromagnetic behavior of ZnCoO was observed with a coercivity of 70 Oe. We observed the loop shift at 5 K in the field-cooled samples of ZnCoO/Cu/IrMn and an enhanced coercivity in the zero-field-cooled samples, which indicated the existence of exchange coupling between ZnCoO and IrMn through a thin Cu layer (0.15 nm). Furthermore, the exchange field of ZnCoO was increased from 55 to 113 Oe by increasing the cooling field from 3 to 15 kOe
Keywords :
cobalt compounds; coercive force; ion beam assisted deposition; iridium alloys; magnetic semiconductors; magnetic thin films; manganese alloys; zinc compounds; 5 K; DMS; ZnCoO-Cu-IrMn; dilute magnetic semiconductor; enhanced coercivity; exchange bias; exchange coupling; ferromagnetic behavior; high-quality epitaxial; magnetic film deposition; reactive ion beam sputtering; thin Cu layer; Antiferromagnetic materials; Argon; Coercive force; Ion beams; Magnetic semiconductors; Materials science and technology; Plasma measurements; Plasma temperature; Superconducting films; X-ray scattering; Dilute magnetic semiconductor (DMS); IrMn; ZnCoO; exchange bias;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.879757
