• DocumentCode
    766195
  • Title

    Interfacial Effects of MgO Buffer Layer on Perpendicular Anisotropy of L1_0 FePt Films

  • Author

    Lim, Byong Chan ; Chen, Jim S. ; Chow, G.M.

  • Author_Institution
    Data Storage Inst., Nat. Univ. of Singapore
  • Volume
    42
  • Issue
    10
  • fYear
    2006
  • Firstpage
    3017
  • Lastpage
    3019
  • Abstract
    MgO buffer layer in FePt perpendicular media blocked diffusion from the CrRu underlayer and promoted epitaxial growth of the FePt L1 0 film. The MgO layer deposited at 50degC appeared continuous and the interface roughness between MgO and FePt decreased with increasing thickness up to 4 nm. The predominant FePt (001) texture slightly improved with increasing MgO thickness. At 350degC, deposited MgO (2-nm thickness) was discontinuous and island-like. For 8-nm-thick MgO, the FePt (001) dominated and FePt (111) almost disappeared. Defects such as grain boundaries, twin boundaries, and interface roughness contributed to the high coercivity as a result of high deposition temperature or small MgO thickness
  • Keywords
    buffer layers; coercive force; epitaxial growth; interface roughness; perpendicular magnetic anisotropy; twin boundaries; 350 C; 50 C; CrRu; FePt; MgO; buffer layer; epitaxial growth; grain boundaries; high coercivity; interface roughness; interfacial effects; layer deposition; perpendicular anisotropy; perpendicular media blocked diffusion; twin boundaries; Anisotropic magnetoresistance; Buffer layers; Data engineering; Epitaxial growth; Magnetic materials; Materials science and technology; Reflection; Sputtering; Temperature; X-ray scattering; Buffer layer; FePt; MgO; interfacial effect;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2006.878402
  • Filename
    1704515