Title :
Interfacial Effects of MgO Buffer Layer on Perpendicular Anisotropy of

FePt Films
Author :
Lim, Byong Chan ; Chen, Jim S. ; Chow, G.M.
Author_Institution :
Data Storage Inst., Nat. Univ. of Singapore
Abstract :
MgO buffer layer in FePt perpendicular media blocked diffusion from the CrRu underlayer and promoted epitaxial growth of the FePt L1 0 film. The MgO layer deposited at 50degC appeared continuous and the interface roughness between MgO and FePt decreased with increasing thickness up to 4 nm. The predominant FePt (001) texture slightly improved with increasing MgO thickness. At 350degC, deposited MgO (2-nm thickness) was discontinuous and island-like. For 8-nm-thick MgO, the FePt (001) dominated and FePt (111) almost disappeared. Defects such as grain boundaries, twin boundaries, and interface roughness contributed to the high coercivity as a result of high deposition temperature or small MgO thickness
Keywords :
buffer layers; coercive force; epitaxial growth; interface roughness; perpendicular magnetic anisotropy; twin boundaries; 350 C; 50 C; CrRu; FePt; MgO; buffer layer; epitaxial growth; grain boundaries; high coercivity; interface roughness; interfacial effects; layer deposition; perpendicular anisotropy; perpendicular media blocked diffusion; twin boundaries; Anisotropic magnetoresistance; Buffer layers; Data engineering; Epitaxial growth; Magnetic materials; Materials science and technology; Reflection; Sputtering; Temperature; X-ray scattering; Buffer layer; FePt; MgO; interfacial effect;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.878402