Title :
Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb ‘W’-Type QW Laser on InP Substrate
Author :
Chia-Hao Chang ; Zong-Lin Li ; Hong-Ting Lu ; Chien-Hung Pan ; Chien-Ping Lee ; Lin, G. ; Sheng-Di Lin
Author_Institution :
Dept. of Electrics Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 μm exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss αi and internal quantum efficiency ηi of the laser are 17.5 cm-1 and 15%, respectively.
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical losses; quantum well lasers; InGaAs-GaAsSb; InP; InP substrate; InP-based InGaAs/GaAsSb W-type quantum wells; Sb-free separate confined layer; electrically driven short-wavelength infrared semiconductor laser; infinite cavity length; internal loss; internal quantum efficiency; laser lasing; low-threshold current density; low-threshold short-wavelength infrared InGaAs/GaAsSb W-type QW laser; pulsed operation; room temperature; temperature 293 K to 298 K; wavelength 2.35 mum; Cavity resonators; Indium gallium arsenide; Quantum well lasers; Strain; Substrates; ‘W’-type quantum wells; ???W???-type quantum wells; InAlGaAs separate confined layer; InP-based; short-wavelength infrared;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2362151
