Sub-Nanoampere One-Shot Single Electron Transistor Readout Electrometry Below 10 Kelvin

Author

Das, Krishanu ; Lehmann, T. ; Dzurak, A.S.

Author_Institution

Sch. of Electr. Eng. & Telecommun., Univ. of New South Wales (UNSW), Sydney, NSW, Australia

Volume

61

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

2816

Lastpage

2824

Abstract

The Single Electron Transistor holds the potential to be a suitable readout device for future solid-state quantum computers. The low temperature measurement results of a 0.5 μm Silicon-On-Sapphire CMOS circuit designed to interface with a Single Electron Transistor are presented. Careful design of the experimental set-up is critical for conducting the circuit test and performance measurements at cryogenic temperatures. The circuit operates at 4 K and achieves single-shot readout with a resolution in the order of one nanoampere. A detection delay as low as 1.5 μs is recorded while dissipating only 20-30 μW power.

Keywords

CMOS integrated circuits; charge measurement; electric sensing devices; readout electronics; single electron transistors; cryogenic temperature; low temperature measurement; one shot single electron transistor; power 20 muW to 30 muW; silicon-on-sapphire CMOS circuit; size 0.5 mum; solid state quantum computer; subnanoampere readout electrometry; temperature 4 K; CMOS integrated circuits; Cryogenics; Current measurement; Integrated circuit modeling; Single electron transistors; Transistors; Analog circuits; SET; cryogenic CMOS; current detector; low temperature circuit; silicon-on-insulator; single Electron Transistor; single-shot readout.; temperature 4 K;

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2014.2321196

Filename

6902834