DocumentCode
766380
Title
Dynamic and low-frequency noise characterization of Si-Ge heterojunction-bipolar transistors at cryogenic temperatures
Author
Arnaboldi, Claudio ; Boella, Giuliano ; Pessina, Gianluigi
Author_Institution
Dipt. di Fisica, Univ. di Milano Bicocca, Italy
Volume
50
Issue
4
fYear
2003
Firstpage
921
Lastpage
927
Abstract
We present the characterization of the static and low-frequency noise performances of some commercial Si-Ge heterojunction bipolar transistors from 4.2 K to room temperature. The low injection region of operation was considered in view of their possible applications for the readout of array of cryogenic detectors.
Keywords
bipolar transistors; cryogenic electronics; germanium radiation detectors; semiconductor device noise; silicon compounds; silicon radiation detectors; Si-Ge; cryogenic detectors; cryogenic temperatures; heterojunction-bipolar transistors; low-frequency noise characterization; noise measurements; semiconductor device noise; Bipolar transistors; Cryogenics; Detectors; Frequency; Heterojunction bipolar transistors; Low-frequency noise; Photonic band gap; Semiconductor device noise; Sensor arrays; Temperature distribution;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.814590
Filename
1221898
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