Title :
Dynamic and low-frequency noise characterization of Si-Ge heterojunction-bipolar transistors at cryogenic temperatures
Author :
Arnaboldi, Claudio ; Boella, Giuliano ; Pessina, Gianluigi
Author_Institution :
Dipt. di Fisica, Univ. di Milano Bicocca, Italy
Abstract :
We present the characterization of the static and low-frequency noise performances of some commercial Si-Ge heterojunction bipolar transistors from 4.2 K to room temperature. The low injection region of operation was considered in view of their possible applications for the readout of array of cryogenic detectors.
Keywords :
bipolar transistors; cryogenic electronics; germanium radiation detectors; semiconductor device noise; silicon compounds; silicon radiation detectors; Si-Ge; cryogenic detectors; cryogenic temperatures; heterojunction-bipolar transistors; low-frequency noise characterization; noise measurements; semiconductor device noise; Bipolar transistors; Cryogenics; Detectors; Frequency; Heterojunction bipolar transistors; Low-frequency noise; Photonic band gap; Semiconductor device noise; Sensor arrays; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.814590
