GaN MSM UV photodetectors with titanium tungsten transparent electrodes

Author

Wang, K. ; Chang, S.J. ; Su, Y.K. ; Chiou, Y.Z. ; Chen, S.C. ; Chang, C.S. ; Lin, T.K. ; Liu, H.L. ; Tang, J.J.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

53

Issue

1

fYear

2006

Firstpage

38

Lastpage

42

Abstract

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with titanium tungsten (TiW) transparent electrodes were fabricated and characterized. It was found that the 10-nm-thick TiW film deposited with a 300-W RF power can still provide a reasonably high transmittance of 75.1% at 300 nm, a low resistivity of 1.7×10^-3 Ω·cm and an effective Schottky barrier height of 0.773 eV on u-GaN. We also achieved a peak responsivity of 0.192 A/W and a quantum efficiency of 66.4% from the GaN ultraviolet MSM photodetector with TiW electrodes. With a 3-V applied bias, it was found that minimum noise equivalent power and maximum D^* of our detector were 1.987×10^-10 W and 6.365×10⁹ cmHz^0.5W^-1, respectively.

Keywords

III-V semiconductors; Schottky barriers; electrodes; gallium compounds; metal-semiconductor-metal structures; metallic thin films; photodetectors; titanium compounds; ultraviolet detectors; wide band gap semiconductors; 10 nm; 3 V; 300 W; GaN; Schottky barrier; TiW; metal-semiconductor-metal ultraviolet photodetector; quantum efficiency; titanium-tungsten transparent electrodes; Acoustical engineering; Conductivity; Detectors; Electrodes; Gallium nitride; Photodetectors; Radio frequency; Schottky barriers; Titanium; Tungsten; GaN; metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors; noise; titanium tungsten (TiW);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.860780

Filename

1561543