HSPICE macromodel of PCRAM for binary and multilevel storage

Author

Wei, X.Q. ; Shi, L.P. ; Walia, Rajan ; Chong, T.C. ; Zhao, R. ; Miao, X.S. ; Quek, B.S.

Author_Institution

Data Storage Inst., Singapore

Volume

53

Issue

1

fYear

2006

Firstpage

56

Lastpage

62

Abstract

A general macromodel of the phase change random access memory (PCRAM) elements for use in HSPICE-based computer simulator is proposed in this paper by introducing physical models of PCRAM elements. It can simulate the dc and transient behavior of PCRAM element. In this paper, the model was integrated with the standard R/W circuit and successfully simulated the R-I curve and dependence between amplitude and width of programming pulses. A comparison between experimental and simulation results were also given. Furthermore, by including the partial crystallization states, the macromodel was developed for simulating the multilevel storage.

Keywords

integrated circuit modelling; phase change materials; random-access storage; HSPICE macromodel; binary storage; crystallization state; integrated circuit; multilevel storage; nonvolatile memory; phase change random access memory; programming pulse; Circuit simulation; Computational modeling; Crystalline materials; Crystallization; Integrated circuit modeling; Integrated circuit technology; Nonvolatile memory; Phase change random access memory; Random access memory; Switches; HSPICE macromodel; integrated circuit (IC); multilevel storage; nonvolatile memory (NVM); phase change random access memory (PCRAM);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.860645

Filename

1561546