DocumentCode
766589
Title
Temporal response of CZT detectors under intense irradiation
Author
Du, Yanfeng ; LeBlanc, James ; Possin, George E. ; Yanoff, Brian D. ; Bogdanovich, Snezana
Author_Institution
GE Global Res. Center, Niskayuna, NY, USA
Volume
50
Issue
4
fYear
2003
Firstpage
1031
Lastpage
1035
Abstract
The temporal response of CdZnTe (CZT) detectors is measured under different X-ray flux, spectra, and detector bias conditions. A comprehensive model has been developed to investigate the detector response under these conditions. The calculations have been compared with our measured results. Reasonable qualitative agreement is shown between the model and measurement results. This model provides a powerful tool to understand the detector temporal response, photocurrent dependence on the irradiation intensity, bias voltage, and defect characteristics. Understanding the detector response from a microscopic level can provide a guide to improve material properties and detector device design.
Keywords
II-VI semiconductors; X-ray detection; cadmium compounds; semiconductor counters; wide band gap semiconductors; CdZnTe; CdZnTe detectors; X-ray flux; bias voltage; defect characteristics; detector temporal response; irradiation intensity; medical imaging; photocurrent dependence; temporal response; Biomedical imaging; Cathodes; Photoconductivity; Pixel; Polarization; Radiation detectors; Voltage; X-ray detection; X-ray detectors; X-ray imaging;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.815348
Filename
1221916
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