DocumentCode :
766589
Title :
Temporal response of CZT detectors under intense irradiation
Author :
Du, Yanfeng ; LeBlanc, James ; Possin, George E. ; Yanoff, Brian D. ; Bogdanovich, Snezana
Author_Institution :
GE Global Res. Center, Niskayuna, NY, USA
Volume :
50
Issue :
4
fYear :
2003
Firstpage :
1031
Lastpage :
1035
Abstract :
The temporal response of CdZnTe (CZT) detectors is measured under different X-ray flux, spectra, and detector bias conditions. A comprehensive model has been developed to investigate the detector response under these conditions. The calculations have been compared with our measured results. Reasonable qualitative agreement is shown between the model and measurement results. This model provides a powerful tool to understand the detector temporal response, photocurrent dependence on the irradiation intensity, bias voltage, and defect characteristics. Understanding the detector response from a microscopic level can provide a guide to improve material properties and detector device design.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; semiconductor counters; wide band gap semiconductors; CdZnTe; CdZnTe detectors; X-ray flux; bias voltage; defect characteristics; detector temporal response; irradiation intensity; medical imaging; photocurrent dependence; temporal response; Biomedical imaging; Cathodes; Photoconductivity; Pixel; Polarization; Radiation detectors; Voltage; X-ray detection; X-ray detectors; X-ray imaging;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2003.815348
Filename :
1221916
Link To Document :
بازگشت